- The system is fully digital high-resolution Field Emission Scanning Electron Microscope (FE-SEM) equipped with focused ion beam (FIB) technology. It allows fast characterization of nanometer details and analysis in 2D and 3D, high-quality thin sample preparation and in-situ materials testing - Electron Beam Deceleration for improved low-kV performance, access to ultra-low landing energies (down to 20 V), charge compensation and the balanced topographic and material contrasts - The system is equipped with a fully motorized Eucentric or Piezo goniometer stage and a tool for in-situ Sample manipulation and TEM lamella transfer - An integrated plasma cleaner (standard) to ensure a clean specimen surface. A clean specimen surface is especially of importance when working at low landing energies, where the deposition rate of hydro carbon is highest and true sample information desired - The system supports 3D EDS with EDS detectors. During the run in the same position, SEM beam Conditions (EHT and current) can be switched automatically between analytical(high kV and current) and imaging conditions (lower kV and current) to avoid compromising 3D resolution

Sample Lift-out Manipulator System - Control by integrated S/W - Closed-loop encoder feedback enabling easy restore/recall of probe positions - Motorized, 360º control of needle rotation Detector - In-lens/In-column or Below the lens traditional Everhart-Thornley detector (E-T): SE - In-column Through the lens detector (TLD): SE & high-loss BSE - In-lens Mirror detector (MD): SE & low-loss BSE - In-column Detector (ICD): highly sensitive no loss BSE & beam deceleration - Below the objective lens (retractable) DBS detector: highly sensitive low voltage solid state low energy electron - Immersion mode: high SE & BSE collection efficiency SEM Electron Optics - Electron Source: High stability Schottky field emitter mounted on the NG hot-swap gun module - Electron Beam Resolution * 0.6 nm at 15 – 2 kV, 0.7 nm at 1 kV, 1.0 nm at 500 V - Accelerating voltage: 100 V to 30 kV - Probe Current: minimum 0.8 pA, maximum 100 nA FIB Ion Optics - Ion Source: Ga+ Liquid Metal Ion Source (LMIS) - Ion Beam Resolution * 2.5 nm at 30 kV, 500 nm at 500 V - Accelerating voltage: 500 V to 30 KV - Probe Current: minimum 1 pA, maximum 65 nA - Gas Injection System: Pt, W, C Precursor - Charge neutralizer system

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