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-.System Type : Cluster Type, Single Wafer Process -.Substrate Specification: (Material)Si Wafer / (Size)8" / (Thickness)0.5t-0.8t -.Film Material: TaN, Cu, etc. -.Base Pressure: (Loadlock Chamber)≤5*10(-3)Torr / (Process Chamber)≤5*10(-3)Torr -.Pumping Condition : No Materials, No Substrate Heating -.Deposition Performance : (Film Uniformity)≤5% / (Active Area)8" (Measuring Conditions)Measured by Alpha-Step or Ellipsometer, 9Points/Sheet, 1-Sigma, [STD/AVG]*100% * System Configuration 1)Loadlock Chamber Module: 1set -Chamber Style: Vertical&Square / -Dimensions: 400W*400D*200Hmm / -Material: SUS304 2)PEALD Process Chamber Module for TaN/Cu : 각1set -Dimensions : 350*350*180Hmm / -Material: Anodized Al.&SUS316 / -Substrate Heater: (Max.Temp)400℃ -Output Power : 600W 3)Frame Module : 1set 4)System Control & Operation Module (Control:By Industrial PC&17" LCD Monitor) : 1set 5)Customer Supplied Items -220VAC Power Circuit(3-Phase,60Hz), 75A/30A(각1) / -Cooling Water(3Kg/㎠&10Kg/㎠) -SS N2/Ar/NH3/H2 Delivery Line / -Vacuum Pumps / -Gas Cabinet or Rack Mount

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