수소를 산소와 반응시켜 수증기를 만들어 열처리로에 공급하여 실리콘 웨이퍼 표면에 산화막을 형성시킴

1.VULCAN-H81RD, 1 Tube System, R&D Type : 1set -Process : Wet-Oxidation (N2,CN2,O2,L-O2) -LoadingWafers: 1-75매/1Tube / (Wafer Type&Size)Round Type, Silicon Wafer, 200mm -Furnace : Kantal A1 Heater(3 Zone Control) -Load Station : Loading / Unloading System Automation -Controller : Fully Automatic PC Base Operation -Recipe Edit : Trend, History, Tube Status, Etc. -Gas System : MFC Gas Flow Control 방식 -Windows Base Controller / PLC Control -Gas Piping : SUS361L EP -UT55A Temp. Controller(Yokogawa) / (Process Temp.)700-1,150℃ -D.I Bubbler System -Interlock System -Dimensions : (Unloading)643*3,242*1,540(W*D*H)mm -ElectricPower: 380VAC, 3Phase, 50/60Hz 2.Quartz Part's: 1set -Process Tube, Door, Load Bar, Load Bar Holder Quartz Sheath, Gas Socket, Front Baffle, Rear Baffle Wool Cap 3.Process Quaartz Part : 1set -200mm Boat 1ea(75Slot), 150mm Boat 1ea(75Slot), Boat Carrier Jig 1ea

MEMS process, CMOS process, 절연막 형성

반도체공정중 확상방식을 이용하여 산화막(절연막) 형성